Changes in structure and conduction type upon addition of Ir to ZnO thin films

Simple item page
dc.contributor.authorZubkins, Martins
dc.contributor.authorKalendarev, Robert
dc.contributor.authorGabrusenoks, Jevgenijs
dc.contributor.authorPlaude, A. V.
dc.contributor.authorZitolo, Andrea
dc.contributor.authorAnspoks, Andris
dc.contributor.authorPudzs, Kaspars
dc.contributor.authorVilnis, Kaspars
dc.contributor.authorAzens, Andris
dc.contributor.authorPurans, Juris
dc.date.accessioned2020-08-19T17:19:55Z
dc.date.available2020-08-19T17:19:55Z
dc.date.issued2017
dc.description.abstractZn-Ir-O (Zn/Ir ≈ 1/1) thin films have been reported to be a potential p-type TCO material. It is, however, unknown whether it is possible to achieve p-type conductivity at low Ir content, and how the type and the magnitude of conductivity are affected by the film structure. To investigate the changes in properties taking place at low and moderate Ir content, this study focuses on the structure, electrical and optical properties of ZnO:Ir films with iridium concentration varying between 0.0 and 16.4 at.%. ZnO:Ir thin films were deposited on glass, Si, and Ti substrates by DC reactive magnetron co-sputtering at room temperature. Low Ir content (up to 5.1 at.%) films contain both a nano-crystalline wurtzite-type ZnO phase and an X-ray amorphous phase. The size of the crystallites is below 10 nm and the lattice parameters a and c are larger than those of pure ZnO crystal. Structural investigation showed that the film's crystallinity declines with the iridium concentration and films become completely amorphous at iridium concentrations between 7.0 and 16.0 at.%. An intense Raman band at approximately 720 cm− 1 appears upon Ir incorporation and can be ascribed to peroxide O22– ions. Measurable electrical conductivity appears together with a complete disappearance of the wurtzite-type ZnO phase. The conduction type undergoes a transition from n- to p-type in the Ir concentration range between 12.4 and 16.4 at.%. Absorption in the visible range increases linearly with the iridium concentration.en_US
dc.description.sponsorshipVMTKC project 18, agreement No. 1.2.1.1/16/A/005; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²en_US
dc.identifier.doi10.1016/j.tsf.2017.05.049
dc.identifier.issn0040-6090
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/52411
dc.language.isoengen_US
dc.publisherElsevier B.V.en_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesThin Solid Films;636
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCES:Physicsen_US
dc.subjectAmorphous doped ZnOen_US
dc.subjectIridiumen_US
dc.subjectReactive DC magnetron co-sputteringen_US
dc.subjectThin filmsen_US
dc.titleChanges in structure and conduction type upon addition of Ir to ZnO thin filmsen_US
dc.typeinfo:eu-repo/semantics/articleen_US
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
anspoks2017.pdf
Size:
1.19 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Zinātniskie raksti (CFI) / Scientific articles