Vacancy defects in Ga2O3: First-principles calculations of electronic structure

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dc.contributor.authorUsseinov, Abay
dc.contributor.authorKoishybayeva, Zhanymgul
dc.contributor.authorPlatonenko, Alexander
dc.contributor.authorPankratov, Vladimir
dc.contributor.authorSuchikova, Yana
dc.contributor.authorAkilbekov, Abdirash
dc.contributor.authorZdorovets, Maxim
dc.contributor.authorPurans, Juris
dc.contributor.authorPopov, Anatoli I.
dc.date.accessioned2022-01-10T17:30:28Z
dc.date.available2022-01-10T17:30:28Z
dc.date.issued2021
dc.descriptionThis research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as the Center of Excellence is supported through the Framework Program for European universities Union Horizon 2020, H2020-WIDESPREAD-01?2016?2017-TeamingPhase2 under Grant Agreement No. 739508, CAMART2 project.en_US
dc.description.abstractFirst-principles density functional theory (DFT) is employed to study the electronic structure of oxygen and gallium vacancies in monoclinic bulk β-Ga2 O3 crystals. Hybrid exchange– correlation functional B3LYP within the density functional theory and supercell approach were successfully used to simulate isolated point defects in β-Ga2 O3. Based on the results of our calcu-lations, we predict that an oxygen vacancy in β-Ga2 O3 is a deep donor defect which cannot be an effective source of electrons and, thus, is not responsible for n-type conductivity in β-Ga2 O3. On the other hand, all types of charge states of gallium vacancies are sufficiently deep acceptors with transition levels more than 1.5 eV above the valence band of the crystal. Due to high formation energy of above 10 eV, they cannot be considered as a source of p-type conductivity in β-Ga2 O3. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. Published under the CC BY 4.0 license.en_US
dc.description.sponsorshipScience Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540); Latvian Council of Science via the Latvian National Research Program VPP-IZM-CERN-2020/1-0002 ; ERAF project 1.1.1.1/20/A/057; Latvian Council of Science No. LZP-2018/1-0214; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.en_US
dc.identifier.doi10.3390/ma14237384
dc.identifier.issn1996-1944
dc.identifier.urihttps://www.mdpi.com/1996-1944/14/23/7384
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/56945
dc.language.isoengen_US
dc.publisherMultidisciplinary Digital Publishing Institute (MDPI)en_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesMaterials;14 (23); 7384
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCESen_US
dc.subjectDeep donoren_US
dc.subjectDFTen_US
dc.subjectOxygen vacancyen_US
dc.subjectP-type conductivityen_US
dc.subjectPoint defectsen_US
dc.subjectβ-Ga2 O3en_US
dc.titleVacancy defects in Ga2O3: First-principles calculations of electronic structureen_US
dc.typeinfo:eu-repo/semantics/articleen_US
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