Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique
Date
2017
Authors
Kjapsna, Alvars
Dimitrocenko, Lauris
Tale, Ivars
Trukhin, Anatoly
Ignatans, Reinis
Grants, Rolands
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications Ltd.
Abstract
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
Description
Keywords
Research Subject Categories::NATURAL SCIENCES:Physics , Crystal structure , Gallium oxide , MOCVD , Sapphire , Trimethylgallium , Water