Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique

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dc.contributor.authorKjapsna, Alvars
dc.contributor.authorDimitrocenko, Lauris
dc.contributor.authorTale, Ivars
dc.contributor.authorTrukhin, Anatoly
dc.contributor.authorIgnatans, Reinis
dc.contributor.authorGrants, Rolands
dc.date.accessioned2020-10-02T10:20:46Z
dc.date.available2020-10-02T10:20:46Z
dc.date.issued2017
dc.description.abstractGrowth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.en_US
dc.description.sponsorshipInstitute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART²en_US
dc.identifier.doi10.4028/www.scientific.net/KEM.721.253
dc.identifier.issn1013-9826
dc.identifier.urihttps://dspace.lu.lv/dspace/handle/7/52591
dc.language.isoengen_US
dc.publisherTrans Tech Publications Ltd.en_US
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/739508/EU/Centre of Advanced Material Research and Technology Transfer/CAMART²en_US
dc.relation.ispartofseriesKey Engineering Materials;721
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResearch Subject Categories::NATURAL SCIENCES:Physicsen_US
dc.subjectCrystal structureen_US
dc.subjectGallium oxideen_US
dc.subjectMOCVDen_US
dc.subjectSapphireen_US
dc.subjectTrimethylgalliumen_US
dc.subjectWateren_US
dc.titleCharacterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD techniqueen_US
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US
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