Sb2S3 nanovadu fotoelektriskās īpašības
Date
2015
Authors
Kiseļovs, Aleksandrs
Journal Title
Journal ISSN
Volume Title
Publisher
Latvijas Universitāte
Abstract
Perspektīvā nanovadus varēs izmantot sensoros, slēdžos, saules baterijās un citās optoelektriskajās ierīcēs, ņemot vērā to lielo virsmas un tilpuma attiecību. Pateicoties šai attiecībai, fizikālās īpašības nanoizmēros ir izteiktākas nekā makroskopiskos izmēros. Līdz šim nebija iespējams iegūt informāciju par Sb2S3 nanovadu fotoelektriskajām īpašībām. Darbā tika pētītas Sb2S3 nanovadu fotoelektriskās īpašības atkarībā no ierosinātās gaismas viļņu garuma, uzņemot I-V un fotostrāvas raksturlīknes.
Darbā tika pētīta Sb2S3 nanovadu piemērotība dažādu optoelektrisko ierīču izstrādē. Anodētā alumīnija oksīda (AAO) matricā iekapsulēto nanovadu masīvu īpašības tika salīdzinātas ar individuālo nanovadu īpašībām. Eksperimentā tika konstatēts, ka individuālam Sb2S3 nanovadam fotostrāvas pieaugums (1,77•10-10 A) ir lielāks nekā vienam nanovadam AAO matricā (5,36•10-17 A). Tika secināts, ka AAO matricā notiek procesi, kas kavē fotoinducēto lādiņnesēju kustību.
Perspective uses of nanowires are in sensors, switches, photovoltaic cells and other optoelectronic devices, due to high surface-to-volume ratio, taking into account this ratio, physical properties in nano-dimensions are more explicit than those in macro-dimensions. Not many studies have been conducted on the photoelectrical properties of Sb2S3 nanowires. This paper analyses photoelectrical properties of Sb2S3 taking into account the wavelength of light. Furthermore performance curves for I-V and photocurrent were generated in this paper. Properties of nanowires encapsulated in anodic aluminium oxide and those of individual nanowire were compared. It was concluded in the experiment that photocurrent increase of individual Sb2S3 nanowire (1,77•10-10 A) is higher than photocurrent of a single nanowire in AAO template (5,36•10-17 A). It was concluded that processes are taking place in the AAO template, which hinder the movement of photo-induced charge carriers.
Perspective uses of nanowires are in sensors, switches, photovoltaic cells and other optoelectronic devices, due to high surface-to-volume ratio, taking into account this ratio, physical properties in nano-dimensions are more explicit than those in macro-dimensions. Not many studies have been conducted on the photoelectrical properties of Sb2S3 nanowires. This paper analyses photoelectrical properties of Sb2S3 taking into account the wavelength of light. Furthermore performance curves for I-V and photocurrent were generated in this paper. Properties of nanowires encapsulated in anodic aluminium oxide and those of individual nanowire were compared. It was concluded in the experiment that photocurrent increase of individual Sb2S3 nanowire (1,77•10-10 A) is higher than photocurrent of a single nanowire in AAO template (5,36•10-17 A). It was concluded that processes are taking place in the AAO template, which hinder the movement of photo-induced charge carriers.
Description
Keywords
Fizika , Sb2S3 , nanovadi , fotovadāmība , AAO